| PART |
Description |
Maker |
| GS2M GS2B GS2A GS2D GS2G GS2J GS2K |
2.0 Amp Silicon Rect.0 Amp Silicon Rectifier 50 to 1000 Voltsifier 50 to 1000 OLTS
|
MCC[Micro Commercial Components]
|
| 05110G0F 05110GOF |
Silicon Controlled Rectifier; Package: TO-65; IT (Av) (A): 50; VTM (V): 2.5; IH (mA): 200; VGT (V): 3; IGT (µA): 100000; Vrrm (V): 1000; 80 A, 1000 V, SCR, TO-208AC
|
Microsemi Corporation
Microsemi, Corp.
|
| MB3505-BC01 MB351-BC01 MB352-BC01 MB354-BC01 MB356 |
35A, 600V ultra fast recovery rectifier
35 Amp Single Phase Bridge Rectifier 50 to 1000 Volts 35 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
35 Amp Single Phase Bridge Rectifier 50 to 1000 Volts 35 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
35 Amp Single Phase Bridge Rectifier 50 to 1000 Volts 35 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
35 Amp Single Phase Bridge Rectifier 50 to 1000 Volts 35 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
|
MCC[Micro Commercial Components]
Micro Commercial Components Corp.
Micro Commercial Components, Corp.
|
| SPD55501 SPD5554SMSS SPD5554SMSTX SPD5554SMSTXV SP |
5 AMPS, 200 thru 1000 VOLTS 2 レsec STANDARD RECOVERY RECTIFIER 5 A, 1000 V, SILICON, RECTIFIER DIODE
5 AMPS, 200 thru 1000 VOLTS 2 レsec STANDARD RECOVERY RECTIFIER 1.3 A, 1000 V, SILICON, RECTIFIER DIODE
|
Solid States Devices, Inc
Solid State Devices, Inc.
|
| 1N4007GPP 1N4006GPP |
GLASS PASSIVATED JUNCTION SILICON RECTIFIER 1.0 AMP, 50 THRU 1000 VOLTS 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41
|
Central Semiconductor Corp.
Vishay Intertechnology, Inc.
|
| FM4007C FM4006C FM4001C FM4005C FM4002C |
1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AB
SURFACE MOUNT GLASS PASSIVATED SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
|
RECTRON LTD
Rectron Semiconductor
|
| NTE128P NTE129P |
1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO237
1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO237
Silicon Complementary Transistors General Purpose Amp
|
NTE[NTE Electronics]
|
| MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100 |
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM TMOS14安培，功率场效应晶体000伏特的RDS（on）\u003d 0.80欧姆
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM 14 A, 1000 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| APT30D100BCT_05 APT30D100BCT APT30D100BCTG APT30D1 |
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
Fast Recovery Epitaxial Diode; Package: TO-247 [B]; IO (A): 30; VR (V): 1000; trr (nsec): 29; VF (V): 2.3; Qrr (nC): 2350; 30 A, 1000 V, SILICON, RECTIFIER DIODE, TO-247
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| FM305B FM306B FM303B FM302B FM304B FM301B FM302B-W |
3 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AA
3 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AA
3 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AA
SURFACE MOUNT GLASS PASSIVATED SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes
3 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AA
3 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA
|
RECTRON LTD
Rectron Semiconductor
|
|
